Mar 2015

For Immediate Release: Pennsylvania headquartered Silicon Power Corporation acquires Applied Pulsed Power

More details can be found in the press release

Jun 2013

APP receives Patent #8,461,620 for laser pumping of thyristors for fast high current rise-times.

Jul 2010

APP is excited to announce our continued expansion. APP now uses over 8000 sq. ft. at our primary location and has further expanded into a 1700 sq. ft. facility in Illinois dedicated toward R&D in assembly and packaging techniques. This new facility will allow APP to develop higher temperature and more compact packages for use with new solid state switch technologies such as SiC thyristors.

Feb 2010

We are pleased to announce that Frank Reles has joined us as our Manufacturing Operations Manager. You can read more about this announcement here.

Dec 2009

This December, Applied Pulsed Power celebrates the start of its 20th year serving the pulsed power community.

Look for your very own APP 20th Year Coffee Mug shipping with your next order.

Jan 2009

APP launches new website.

Dec 2008

APP was awarded a Phase II SBIR from the Air Force Research Laboratory to investigate Solid State Switches for High Voltage Sub-Microsecond Pulsed Power.

Feb 2007

APP joins Advanced Electra Solid State Switch Program for NRL.

Oct 2006

APP delivers first Model S33A-12 48kV compact solid state switch.

Jul 2006

APP receives Patent #7,081,711 for an inductively generated streaming plasma ion source.

Jul 2006

APP receives Patent #7,072,196 for a multi-stage high voltage solid state switch.

Jan 2006

APP receives Patent #6,982,482 for the packaging of solid state devices.

Dec 2005

APP moves into 8500 square foot facility.

Mar 2005

Delivery of first compact 24 kV solid state switch, replacing spark gaps used in medical equipment.

Aug 2004

Sep 2003

APP receives Patent #6,624,684 on a compact, high voltage, solid state switch.

Aug 2001

Received contract from DOE to develop ion source for the Heavy Ion Fusion Program based on APP’s MAP plasma source technology.

Jun 2001

Initiated Phase II DOE program to develop high power solid state switches.

Aug 1998

Received contract from EMRTC to develop long pulse version of the MAP ion diode system.

Aug 1997

Delivered commercial prototype MAP Iâ„¢ ion diode system to QMT.

Jul 1996

Sole source supplier agreement with QM Technologies for development and manufacture of IBEST MAP Iâ„¢ ion diode system.

Dec 1992

Start of 4 year collaboration between APP, Cornell University and Sandia National Laboratories on the development of Ion Beam Surface Treatment (IBEST) technology.

Feb 1992

Phase II contract from DARPA to develop compact x-ray source for x-ray lithography.

Dec 1990

APP founded by Steven Glidden, David Hammer, and Daniel Kalantar.

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